ESTIMATING ANALYSIS OF CONDITIONS FOR DEFECT–FREE QUANTUM DOTS FORMATION IN In<sub>x</sub>Ga<sub>1

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NANOMATERIALS AND NANOTECHNOLOGY
Название	ESTIMATING ANALYSIS OF CONDITIONS FOR DEFECT–FREE QUANTUM DOTS FORMATION IN In_xGa_1–xAs/GaAs HETEROSTRUCTURES
Автор	R.Kh. Akchurin, N.T. Vagapova
Информация об авторе	R.Kh. Akchurin, N.T. Vagapova, Moscow State Academy of Fine Chemical Technology
Реферат	Based on the energy balance model we have calculated the critical thicknesses of misfit dislocations formation and the 2D-3D transition by Stranski—Krastanov mechanism for In_xGa_1-xAs/GaAs growth. The limits of these parameters and the range of solid solution compositions allowing the growth of defect-free quantum dots have been estimated.
Ключевые слова	Heterostructure, quantum dots, epitaxial growth, Stranski—Krastanov mechanism, In_xGa_1-xAs/ GaAs.
Language of full-text	русский
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