SIMULATION OF COALESCENCE OF PRIMARY GROWTH DEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS

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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
Название	SIMULATION OF COALESCENCE OF PRIMARY GROWTH DEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS
Автор	V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk,
Информация об авторе	V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, Classical Private University, Ukraine
Реферат	An analytical expression of primary growth defect size distribution function has been obtained. We have shown that the coalescence stage of primary growth defects is not a time-limited process and occurs concurrently with defect formation.
Ключевые слова	Microdefects, silicon single crystals, coalescence, kinetics, precipitation.
Language of full-text	русский
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