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| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| ArticleName | SIMULATION OF COALESCENCE OF PRIMARY GROWTH DEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS |
| ArticleAuthor | V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, |
| ArticleAuthorData | V.I. Talanin, I.E. Talanin, A.I. Mazurskii and M.L. Maksimchuk, Classical Private University, Ukraine |
| Abstract | An analytical expression of primary growth defect size distribution function has been obtained. We have shown that the coalescence stage of primary growth defects is not a time-limited process and occurs concurrently with defect formation. |
| keywords | Microdefects, silicon single crystals, coalescence, kinetics, precipitation. |
| Language of full-text | russian |
| Full content | Buy |
